Title :
Total Ionizing dose and single event effects test results of a Radiation Hardness-by-Design Library for 0.15μm fully depleted SOI-AISC
Author :
Makihara, A. ; Ebihara, T. ; Yokose, T. ; Tsuchiya, Y. ; Miyazaki, Y. ; Satoh, Y. ; Shindou, H. ; Kuboyama, S.
Author_Institution :
High-Reliability Eng. & Components Corp., Tsukuba, Japan
Abstract :
This paper describes Total Ionizing Dose and Single Event Effects test results of a Radiation Hardness-By-Design Library for 0.15μm Fully Depleted CMOS/SOI-ASIC at a commercial foundry. Reasonable data was obtained to improve the library.
Keywords :
CMOS integrated circuits; application specific integrated circuits; elemental semiconductors; radiation hardening (electronics); silicon; silicon-on-insulator; Si; fully depleted CMOS-SOI-ASIC; radiation hardness-by-design library; single event effect test; size 0.15 mum; total ionizing dose test; CMOS integrated circuits; Clocks; Inverters; Latches; Libraries; Logic gates; Single event upset; 0.15μm Fully Depleted CMOS/SOI; ASIC; Radiation Hardness-By-Design; Single Event Effects; Total Ionizing Dose; commercial foundry;
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
DOI :
10.1109/RADECS.2009.5994729
