Title :
Deep-level optical spectroscopy on iron acceptor doped in InP and InxGa1-xP
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Spectral dependence of the photoionization cross sections for iron (Fe) acceptor doped in the liquid-phase-epitaxy-grown InP and Inx Ga1-xP (x=0.49) layers is determined by photocapacitance spectroscopy. The deep-level structures and the carrier-emission processes are precisely analyzed. For the crystal-field-split levels of Fe2+:5E and 5 T2, the fundamental transitions of 5E-Γ1, Γ15-5E in InP:Fe, and Γ15-5E, Γ15- 5T2 in InxGa1-xP:Fe are adequately described by the Lucovsky-model calculation. The optical thresholds and the crystal-field-split energies are determined accurately. The small difference between the optical and thermal energies indicates that the Fe acceptor level is perturbed weakly by the lattice vibration in the InP and InxGa1-xP. Nonexponential photocapacitance transient is observed in the Inx Ga1-xP:Fe for the alloying effects
Keywords :
III-V semiconductors; crystal field interactions; deep level transient spectroscopy; deep levels; gallium compounds; indium compounds; iron; photocapacitance; photoionisation; semiconductor epitaxial layers; vibrational modes; InGaP:Fe; InP:Fe; Lucovsky-model; acceptor doped layers; crystal-field-split levels; deep-level structures; lattice vibration; liquid-phase-epitaxy; optical thresholds; photocapacitance spectroscopy; photoionization cross sections; spectral dependence; Atom optics; Crystals; Diodes; Electron optics; Indium phosphide; Ionization; Iron; Optical buffering; Spectroscopy; Stimulated emission;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773686
