Comparison of TID response and SEE characterization of single- and multi-level high density NAND flash memories

Author

Irom, Farokh ; Nguyen, Duc N. ; Harboe-Sørensen, Reno ; Virtanen, Ari

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

fYear

2009

fDate

14-18 Sept. 2009

Firstpage

606

Lastpage

608

Abstract

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multilevel flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories. The charge pump in this study survived up to 600 krads.

Keywords

NAND circuits; charge pump circuits; flash memories; SEE characterization; TID response; charge pump; heavy ion single-event measurement; memory size 8 GByte; multilevel high density NAND flash memory; single event upset characterization; single-level high density NAND flash memory; total ionizing dose response; Charge pumps; Computer architecture; Flash memory; Microprocessors; Nonvolatile memory; Radiation effects; Single event upset; NAND flash; floating gate; gamma rays; nonvolatile memory; single event effects; single event upset; total ionizing dose; x-ray;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on

Conference_Location

Bruges

ISSN

0379-6566

Print_ISBN

978-1-4577-0492-5

Electronic_ISBN

0379-6566

Type

conf

DOI

10.1109/RADECS.2009.5994731

Filename

5994731