DocumentCode :
2908014
Title :
Radiation studies on the UMC 180nm CMOS process at GSI
Author :
Löchner, Sven ; Deppe, Harald
Author_Institution :
GSI Helmholtzzentrum fur Schwe-rionenforschung GmbH, Darmstadt, Germany
fYear :
2009
fDate :
14-18 Sept. 2009
Firstpage :
614
Lastpage :
616
Abstract :
GRISU test ASICs were irradiated with different types of heavy ions, fluences up to 1012 ions/cm2 and with a LET in the range of 1-60MeV cm2/mg. Cross section for SEU/SET were measured during the tests. Furthermore TID measurements were applied. Results on degradation and annealing are reported.
Keywords :
CMOS integrated circuits; application specific integrated circuits; GRISU test ASIC; LET; SEU-SET; TID measurements; UMC CMOS process; heavy ions; radiation studies; single event transient; single event upset; size 180 nm; total ionising dose effects; Application specific integrated circuits; Radiation effects; Semiconductor device measurement; Single event upset; Testing; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on
Conference_Location :
Bruges
ISSN :
0379-6566
Print_ISBN :
978-1-4577-0492-5
Electronic_ISBN :
0379-6566
Type :
conf
DOI :
10.1109/RADECS.2009.5994732
Filename :
5994732
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2908014
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