Title :
Si/InGaAs ultralow dark current wafer bonded photodetectors
Author :
Levine, B.F. ; Pinzone, C.J. ; Hui, S. ; King, C.A. ; Leibenguth, R.E.
Author_Institution :
Lucent Technol., AT&T Bell Labs., Murray Hill, NJ, USA
Abstract :
A method of wafer bonding is demonstrated which significantly reduces the thermal expansion mismatch stress, by removing the substrate before the high temperature anneal, thereby allowing elastic accommodation of the thin device layers. Record low dark current Si/InGaAs pin detectors have been realized
Keywords :
III-V semiconductors; dark conductivity; elemental semiconductors; gallium arsenide; indium compounds; photodetectors; silicon; thermal expansion; wafer bonding; Si-InGaAs; Si/InGaAs ultralow dark current wafer bonded photodetectors; elastic accommodation; high temperature anneal; pin detectors; substrate; thermal expansion mismatch stress; thin device layers; Annealing; Dark current; Detectors; Indium gallium arsenide; Indium phosphide; Photodetectors; Temperature; Thermal expansion; Thermal stresses; Wafer bonding;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773692
