Improved excess noise and temperature dependence of multiplication characteristics in thin InP avalanching regions

Author

Tan, C.H. ; Li, K.F. ; Plimmer, S.A. ; David, J.P.R. ; Rees, G.J. ; Clark, J. ; Button, C.C.

Author_Institution

Dept. of Electron. & Electr. Eng., Sheffield Univ., UK

fYear

1999

fDate

1999

Firstpage

295

Lastpage

298

Abstract

We report measurements of electron initiated avalanche noise at room temperature in a range of InP p⁺-i-n⁺ diodes with i-region widths, M ranging from 2.40 μm to 0.24 μm. A significant reduction in excess noise is observed with decreasing w at constant multiplication. We also report electron initiated photomultiplication and breakdown voltage of InP p⁺-i-n⁺ diodes with nominal i-region widths of 0.30 μm and 0.50 μm at temperatures ranging from 20 K to 300 K. Improved temperature stability is observed as the avalanche region width is reduced

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; indium compounds; p-i-n photodiodes; semiconductor device breakdown; semiconductor device noise; 0.30 to 0.50 mum; 20 to 300 K; InP; InP p⁺-i-n⁺ diodes; avalanche region width; breakdown voltage; electron initiated avalanche noise; electron initiated photomultiplication; excess noise; multiplication characteristics; nominal i-region widths; room temperature; temperature dependence; temperature stability; thin InP avalanching regions; Absorption; Diodes; Electrons; Indium phosphide; Noise measurement; Noise reduction; Temperature dependence; Temperature distribution; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773693

Filename

773693