InP HEMT lightwave communication ICs for 40 Gbit/s and beyond

Author

Sano, Eiichi

Author_Institution

NTT Network Innovation Labs., Kanagawa, Japan

fYear

1999

fDate

1999

Firstpage

299

Lastpage

304

Abstract

Ultrahigh-speed integrated-circuit technology is one of the keys to achieving ultralarge-capacity optical communication systems. Technological breakthroughs in circuit and packaging design as well as improved transistor performance are needed to reach the over-40 Gbit/s operating region. This paper describes a 0.1 μm gate InP HEMT, novel circuit design, and broadband packaging technologies developed to boost the circuit speed. We used these technologies to make 40 Gbit/s lightwave communication ICs. This paper also describes the problems in moving toward 100 Gbit/s operation

Keywords

HEMT integrated circuits; III-V semiconductors; digital communication; indium compounds; integrated circuit packaging; optical communication equipment; very high speed integrated circuits; 0.1 micron; 40 to 100 Gbit/s; HEMT lightwave communication ICs; InP; broadband packaging technologies; ultrahigh-speed IC technology; Circuits; Erbium-doped fiber amplifier; Gallium arsenide; HEMTs; Indium phosphide; Optical receivers; Optical resonators; Packaging; Time division multiplexing; Wavelength division multiplexing;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773694

Filename

773694