Effect of Base Width and Implantation Dose on Performance of 3-Terminal Magnetotransistor

This paper presents the effect of base width and implantation dose on electrical carriers in the magnetotransistor deflected by the Lorentz force (FL) from magnetic field. The structure of magnetotransistor is designed like a structure of a PNP bipolar junction transistor which comprises of 3 terminals, i.e., emitter, collector and base. The base width (L) is varied (10, 20 and 30 mum) where the spacing between collector and base is fixed at 40 mum. The emitter and collector regions are doped with boron (BF₂) at the dose of 3times10¹⁵, 5times10¹⁵ and 1times10¹⁶ ions/cm². It is found that the sensitivity is increased when increasing L and the implantation dose. It is also demonstrated that the linear relationship between the output voltage of the magnetotransistor circuit and magnetic field can be obtained.