Title :
High performance GaInAs/AlGaAs quantum-dot light emitting diodes and lasers
Author :
Schäfer, F. ; Klopf, F. ; Reithmaier, J.P. ; Forchel, A.
Author_Institution :
Dept. of Tech. Phys., Wurzburg Univ., Germany
Abstract :
We have fabricated GaInAs/AlGas single layer quantum-dot light emitting diodes and lasers by self-organized growth in a molecular beam epitaxy system. Due to the use of migration enhanced epitaxy GaInAs/GaAs quantum-dot electroluminescence with high efficiency at a wavelength of 1.3 μm was achieved. The lasers show emission at 0.94 μm and 0.99 μm with low threshold current densities (Jth=144 A/cm2) and high internal quantum efficiencies (95%). Up to a device temperature of 214°C ground state lasing was obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; light emitting diodes; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; semiconductor quantum dots; 1.3 mum; GaInAs-AlGaAs; device temperature; electroluminescence; ground state lasing; high internal quantum efficiencies; high performance GaInAs/AlGaAs quantum-dot; light emitting diodes; low threshold current densities; migration enhanced epitaxy; molecular beam epitaxy system; quantum-dot lasers; self-organized growth; Epitaxial growth; Gallium arsenide; Land surface temperature; Light emitting diodes; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Semiconductor lasers; Superlattices; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773702
