DocumentCode :
2908276
Title :
Achievement of vertically stacked InAs quantum dots on InP emitting at 1.55 μm
Author :
Fréchenges, S. ; Bertru, N. ; Drouot, V. ; Dehaese, O. ; Loualiche, S. ; Lambert, B.
Author_Institution :
Lab. de Phys. des Solides, Inst. Nat. des Sci. Appliques, Rennes, France
fYear :
1999
fDate :
1999
Firstpage :
337
Lastpage :
339
Abstract :
Due to the use of (311)B InP substrate we grew InAs SAQD with similar qualities to the InAs/GaAs system. In addition a method using a growth interruption under P2 over pressure makes the control of the PL peak emission of the quantum dots structure easy to monitor. Thus this peak position is tuned to 1.55 μm at room temperature. This method has also been used to grow vertically stacked QDs emitting at 1.55 μm with high efficiency
Keywords :
III-V semiconductors; chemical beam epitaxial growth; indium compounds; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum dots; 1.55 mum; InAs; InP; InP substrate; P2 over pressure; PL peak emission; growth interruption; high efficiency; room temperature; vertically stacked InAs quantum dots; Gallium arsenide; Indium phosphide; Laser tuning; Quantum dot lasers; Quantum dots; Stimulated emission; Substrates; Surface emitting lasers; Temperature; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773703
Filename :
773703
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2908276
بازگشت