DocumentCode :
2908286
Title :
Observation of resonant tunneling through InAs quantum dots by using novel electrophotoluminescence spectroscopy
Author :
Ohno, Y. ; Asaoka, K. ; Kishimoto, S. ; Maezawa, K. ; Mizutani, T.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
fYear :
1999
fDate :
1999
Firstpage :
341
Lastpage :
344
Abstract :
The resonant tunneling through single InAs quantum dots embedded in an GaAs/i-Al0.38Ga0.62As/n-GaAs diode has been studied by using microscopic electrophotoluminescence spectroscopy. A group of sharp luminescence lines which originate from single quantum dots was observed by injecting resonant electrons from the emitter to the dots. Bias dependence of a single luminescence line has been investigated. The peak intensity shows triangular dependence which is similar to the current-voltage characteristics of 3D-0D resonant tunneling. When the bias voltage increases, the peak energy slightly shifts to a lower energy indicating the existence of stark effect, and the linewidth slightly increases. Moreover, the higher the luminescence energy is, the broader the linewidth is. This result agrees with the calculated resonant level width. The lifetime of resonant states is estimated to be 2.4-27 ps for luminescence linewidth of 250-22 μeV
Keywords :
III-V semiconductors; Stark effect; charge injection; indium compounds; interface states; photoluminescence; radiative lifetimes; resonant states; resonant tunnelling; semiconductor quantum dots; spectral line breadth; spectral line intensity; 2.4 to 27 ps; 3D-0D resonant tunneling; GaAs-AlGaAs-GaAs; GaAs/i-Al0.38Ga0.62As/n-GaAs diode; InAs; InAs quantum dots; Stark effect; bias dependence; bias voltage; current-voltage characteristics; electrophotoluminescence spectroscopy; lifetime; linewidth; luminescence lines; luminescence linewidth; microscopic electrophotoluminescence spectroscopy; peak energy; peak intensity; resonant electrons; resonant level width; resonant states; resonant tunneling; single InAs quantum dots; single quantum dots; triangular dependence; Diodes; Electron emission; Gallium arsenide; Luminescence; Microscopy; Photoluminescence; Quantum dots; Resonance; Resonant tunneling devices; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773704
Filename :
773704
Link To Document :
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