Title :
Low damage GaInAsP/InP nano-structures by CH4/H2 reactive ion etching and its application to low threshold gain-coupled DFB lasers
Author :
Nunoya, Nobuhiro ; Nakamura, Madoka ; Tanaka, Suguru ; Yasumoto, Hideo ; Fukushi, Ichiro ; Arai, Shigehisa
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
Low damage GaInAsP/InP narrow wire structures with good vertical mesa shape were realized by CH4/H2-reactive ion etching followed by a slight wet chemical etching and organo-metallic vapor phase epitaxy. The damage property of this fabrication process was characterized by the product of the sidewall recombination velocity and the carrier lifetime, which was measured from the wire width dependence of the photoluminescence intensity, to be 28 nm at room temperature. By using this fabrication process, 1.55 μm wavelength five-quantum-well distributed feedback (DFB) laser with a threshold current density as low as 330 A/cm2 (66 A/cm2/well, @L=860 m) was obtained. To our knowledge this is the lowest value reported for 1.55 μm GaInAsP/InP DFB lasers fabricated by dry etching process
Keywords :
III-V semiconductors; MOCVD; carrier lifetime; current density; distributed feedback lasers; electron-hole recombination; etching; gallium arsenide; gallium compounds; indium compounds; nanostructured materials; photoluminescence; quantum well lasers; semiconductor growth; semiconductor quantum wires; spectral line intensity; sputter etching; vapour phase epitaxial growth; 1.55 mum; 20 C; CH4/H2 reactive ion etching; GaInAsP-InP; H2; carrier lifetime; dry etching process; fabrication process; five-quantum-well distributed feedback laser; low damage GaInAsP/InP nano-structures; low damage GaInAsP/InP narrow wire structures; low threshold gain-coupled DFB lasers; organo-metallic vapor phase epitaxy; photoluminescence intensity; room temperature; sidewall recombination velocity; threshold current density; vertical mesa shape; wet chemical etching; wire width dependence; Charge carrier lifetime; Chemicals; Distributed feedback devices; Epitaxial growth; Indium phosphide; Optical device fabrication; Shape; Velocity measurement; Wet etching; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773706
