A 3D-Integration method to compensate output voltage degradation of boost converter for compact Solid-State-Drives

Author

Hatanaka, Teruyoshi ; Johguchi, Koh ; Takeuchi, Ken

Author_Institution

Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan

fYear

2012

fDate

Jan. 31 2012-Feb. 2 2012

Firstpage

1

Lastpage

4

Abstract

This paper demonstrates the program-voltage (20 V) booster operations with stacked Si-chips for 3D-integrated Solid-State-Drives. The magnetic field radiated by the switching current of the boost converter induces the eddy current in the conductor. The eddy current graduates the boost converter performance due to the lowered inductance of the coil. The effects on the performance of the boost converter as a function of the distance from the coil to conductor are investigated. The 3D-SSD requires the >; 0.84 mm space between the coil and the conductor to generate the program-voltage of 20 V. By inserting NAND flash memory chips between the coil and the conductor, the 3D-SSD can be successfully realized without the output voltage degradation.

Keywords

NAND circuits; eddy currents; elemental semiconductors; flash memories; silicon; switching convertors; 3D-SSD; 3D-integrated solid-state-drives; 3D-integration method; NAND flash memory chips; Si; boost converter; compact solid-state-drives; conductor; eddy current; magnetic field; output voltage degradation compensation; program-voltage booster operations; stacked Si-chips; switching current; voltage 20 V; Coils; Conductors; Current measurement; Flash memory; Magnetic field measurement; Magnetic fields; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

3D Systems Integration Conference (3DIC), 2011 IEEE International

Conference_Location

Osaka

Print_ISBN

978-1-4673-2189-1

Type

conf

DOI

10.1109/3DIC.2012.6263023

Filename

6263023