A selective low induced damage ICP dry etching process for a self-aligned InP-InGaAs HBT technology

Author

Etrillard, J. ; Blayac, S. ; Riet, M.

Author_Institution

Groupement d´´Interet Econ., OPTO+, Marcoussis, France

fYear

1999

fDate

1999

Firstpage

369

Lastpage

372

Abstract

We report on an inductively coupled plasma (ICP) process using CH ₄/H₂/O₂ chemistry which have been studied for a self-aligned HBT technology. A very low bias voltage is used to reduce the induced damages. The study has concerned the ion flux characteristics: ion current and ion energy. Surface morphology, pattern profile, etch rates and induced damages were investigated as functions of ion energy and density for an optimized ICP reactor configuration. A comparison is made with an ICP process using a SiCl₄ chemistry. Finally, a selective process allowing one to attempt an almost full dry etching self-aligned process for HBT applications is described

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; sputter etching; surface structure; ICP dry etching; InP-InGaAs; bias voltage; etch rates; inductively coupled plasma; ion current; ion energy; ion flux characteristics; low induced damage etching; pattern profile; self-aligned HBT technology; surface morphology; Chemical technology; Dry etching; Heterojunction bipolar transistors; Hydrogen; III-V semiconductor materials; Plasma applications; Plasma chemistry; Plasma confinement; Plasma sources; Polymers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773711

Filename

773711