Title :
Traveling wave electrodes for 50 GHz operation of opto-electronic devices based on InP
Author :
Mori, L. ; Hoffmann, Dieter ; Bornholdt, Carsten ; Mekonnen, G.G. ; Reier, F.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH
Abstract :
We report on the design, fabrication and performance electro-optic switches based on a Mach-Zehnder interferometer with traveling wave electrodes. Our work aimed at increasing the bandwidth of such devices by reducing the loss parameter a of the electrodes. We realized an electrode configuration using electro-plated metallization layers and achieved a bandwidth of 50 GHz (6.4 dB electrical corresponding to 3 dB optical) suitable for the operation of optoelectronic devices up to 100 Gb/s
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; electro-optical switches; electrodes; electroplated coatings; indium compounds; semiconductor device metallisation; 100 Gbit/s; 50 GHz; InP; Mach-Zehnder interferometer; bandwidth; electro-optic switch; electroplated metallization; loss parameter; optoelectronic device; traveling wave electrode; Bandwidth; Electrodes; Frequency; High speed optical techniques; Indium phosphide; Optical interferometry; Optical refraction; Optical variables control; Optoelectronic devices; Switches;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773714
