Title :
High-speed InP/InGaAs heterojunction phototransistor for millimetre-wave fibre radio communications
Author :
Thuret, J. ; Gonzalez, C. ; Benchimol, J.L. ; Riet, M. ; Berdaguer, P.
Author_Institution :
Groupement d´´Interet Econ., OPTO+, Marcoussis, France
Abstract :
We report on the performance of a graded-base InP/InGaAs heterojunction phototransistor (HPT) as a direct photodetector and an optoelectronic up-converter in 30 GHz band, investigated at a wavelength of 1.55 μm. HPT performances were improved according to the optimised base contact design in order to obtain a higher optical gain Gopt up to the millimetre-wave range. It is also shown, by analysis and measurements, that a complete description of HPTs can be made using a three-port network representation, with the optical window as an input port. This approach has several advantages in particular, the extraction of the `optical´ transducer power gain GOT of the HPTs, needed for designing optoelectronic integrated circuits, OEIC
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; microwave photonics; optical fibre communication; phototransistors; 1.55 micron; 30 GHz; InP-InGaAs; graded base contact; high-speed InP/InGaAs heterojunction phototransistor; millimetre-wave fibre radio communication; optical gain; optical transducer power gain; optical window; optoelectronic integrated circuit; optoelectronic up-converter; photodetector; three-port network; Design optimization; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Optical design; Optimized production technology; Performance gain; Photodetectors; Phototransistors;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773715
