Two Stage Integrated Class-F RF Power Amplifier

Author

Zhe, Huang Min ; A´ain, Abu Khari Bin ; Kordesch, Albert Victor

Author_Institution

Silterra Malaysia Sdn. Bhd., Kulim

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

108

Lastpage

110

Abstract

A new design of an integrated two-stage class-F power amplifier (PA) for wireless application operating in the 1.65 GHz frequency range is described. The circuit utilizes a simple method to drive the output stage with a half sinusoidal waveform that is optimal for class-F operation. The circuit was fabricated in a Silterra´s standard 0.18 mum RF CMOS technology. Measurement result shows a maximum power-added efficiency (PAE) of 42% and a maximum gain of 19.7 dB. When operating from a 3 V voltage supply, the PA delivers an output power of 18.9 dBm. This work demonstrates the feasibility of using class-F PAs for short-range and low-power applications.

Keywords

CMOS integrated circuits; power amplifiers; radiofrequency amplifiers; standards; RF CMOS technology; RF power amplifier; Silterra standard; power-added efficiency; sinusoidal waveform; wireless application; CMOS technology; Circuits; Power amplifiers; Power generation; Power measurement; Radio frequency; Radiofrequency amplifiers; Shape measurement; Switches; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, 2007. ISIC '07. International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0797-2

Electronic_ISBN

978-1-4244-0797-2

Type

conf

DOI

10.1109/ISICIR.2007.4441808

Filename

4441808