Title :
190 GHz InP HEMT MMIC LNA with dry etched backside vias
Author :
Barsky, M. ; Lai, R. ; Kok, Y.L. ; Sholley, M. ; Streit, D.C. ; Block, T. ; Liu, P.H. ; Sabin, E. ; Rogers, H. ; Medvedev, Viktor ; Gaier, T. ; Samoska, L.
Author_Institution :
Electron. Space & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
We report an InP HEMT MMIC LNA incorporating dry etched backside ground plane vias with an on-wafer measured peak gain of 9.6 dB at 190 GHz. The 2-stage balanced LNA exhibited over 7 dB gain across a 30 GHz bandwidth. The high gain and high operating frequency of the amplifier is attributed to the lower source inductance provided by the 25 μm dry etched ground vias, the 80 nm T-gate, and the graded In0.80 Ga0.20As channel HEMT
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MMIC; indium compounds; sputter etching; 190 GHz; 30 GHz; 7 to 9.6 dB; InP; InP HEMT MMIC LNA; T-gate; backside ground plane via; dry etching; graded channel device; source inductance; Dry etching; Extraterrestrial measurements; Gain; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lattices; MMICs; Space technology;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773723
