Title :
A 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs
Author :
Guthrie, J.R. ; Mensa, D. ; Mathew, T. ; Lee, Q. ; Krishnan, S. ; Jaganathan, S. ; Ceran, S. ; Betser, Y. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We report HBT integrated circuits fabricated by substrate transfer on 50 mm diameter copper/polymer substrates. Layout and packaging of complex ~100 GHz circuits is facilitated by the microstrip wiring environment and the low ground lead inductance it affords. For ICs operating above 100 GHz, the process allows radical scaling of the microstrip dielectric thickness without requiring handling of delicate thinned III-V wafers. The process can provide greatly improved heatsinking. Furthermore, full 50 mm wafers can be processed incorporating transferred substrate HBTs, devices which have obtained >500 GHz fmax
Keywords :
bipolar MMIC; copper; heat sinks; heterojunction bipolar transistors; integrated circuit packaging; integrated circuit technology; polymers; substrates; 100 GHz; 50 mm; Cu; HBT IC technology; III-V wafer thinning; MMIC; copper/polymer substrate transfer; dielectric thickness scaling; ground lead inductance; heatsink; integrated circuit; layout; microstrip wiring; packaging; Copper; Dielectric substrates; Heterojunction bipolar transistors; III-V semiconductor materials; Inductance; Integrated circuit packaging; Integrated circuit technology; Microstrip; Polymers; Wiring;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773724
