A 50 mm copper/polymer substrate HBT IC technology for >100 GHz MMICs

Author

Guthrie, J.R. ; Mensa, D. ; Mathew, T. ; Lee, Q. ; Krishnan, S. ; Jaganathan, S. ; Ceran, S. ; Betser, Y. ; Rodwell, M.J.W.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1999

fDate

1999

Firstpage

427

Lastpage

430

Abstract

We report HBT integrated circuits fabricated by substrate transfer on 50 mm diameter copper/polymer substrates. Layout and packaging of complex ~100 GHz circuits is facilitated by the microstrip wiring environment and the low ground lead inductance it affords. For ICs operating above 100 GHz, the process allows radical scaling of the microstrip dielectric thickness without requiring handling of delicate thinned III-V wafers. The process can provide greatly improved heatsinking. Furthermore, full 50 mm wafers can be processed incorporating transferred substrate HBTs, devices which have obtained >500 GHz f_max

Keywords

bipolar MMIC; copper; heat sinks; heterojunction bipolar transistors; integrated circuit packaging; integrated circuit technology; polymers; substrates; 100 GHz; 50 mm; Cu; HBT IC technology; III-V wafer thinning; MMIC; copper/polymer substrate transfer; dielectric thickness scaling; ground lead inductance; heatsink; integrated circuit; layout; microstrip wiring; packaging; Copper; Dielectric substrates; Heterojunction bipolar transistors; III-V semiconductor materials; Inductance; Integrated circuit packaging; Integrated circuit technology; Microstrip; Polymers; Wiring;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773724

Filename

773724