Title :
Observation of high field regions in GaAs MESFETs by using Kelvin probe force microscopy
Author :
Mizutani, T. ; Takeyama, T. ; Matsunami, K. ; Kishimoto, S. ; Maezawa, K. ; Tomizawa, M. ; Schmid, P. ; Lipka, K.-M. ; Kohn, E.
Author_Institution :
Dept. of Quantum Eng., Nagoya Univ., Japan
Abstract :
We have succeeded in measuring potential profile of GaAs MESFETs by using Kelvin probe force microscopy and compared it with that of AlGaAs/InGaAs PHEMT (xln=0.2). The obtained potential profile was different from that of PHEMT. Two-dimensional (2D) device simulation taking the surface state into account revealed that the surface states relaxed the high field at the gate edge. The high field at drain edge was also measured on ungated FETs and was explained by taking both the electron-velocity saturation and surface states
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; scanning probe microscopy; semiconductor device models; surface states; 2D device simulation; AlGaAs/InGaAs PHEMT; GaAs; GaAs MESFETs; Kelvin probe force microscopy; drain edge; electron-velocity saturation; gate edge; high field regions; potential profile; surface states; ungated FETs; Electrostatic measurements; Force measurement; Gallium arsenide; Kelvin; MESFETs; Microscopy; PHEMTs; Probes; Surface topography; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773730
