High current InP double hetero bipolar transistor driver circuit for laser diodes

Author

Schneibel, H. ; Graf, C. ; Bauknecht, R. ; Melchior, H.

Author_Institution

Inst. of Quantum Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

1999

fDate

1999

Firstpage

455

Lastpage

457

Abstract

A driver circuit for laser diodes and semiconductor optical amplifier gates is presented. Single- and multifinger InP/InGaAs double hetero bipolar transistors (DHBT´s) with f_T=79 GHz and f(max)=126 GHz are used in the circuit. These frequencies are valid for single finger transistors with an emitter area of 2.2 μm×8 μm. The present driver is capable of supplying up to 240 mA into a 8.3 ohm resistive load at operating frequencies from dc to 8 Gbit/s

Keywords

III-V semiconductors; bipolar analogue integrated circuits; driver circuits; heterojunction bipolar transistors; indium compounds; laser accessories; millimetre wave bipolar transistors; semiconductor lasers; semiconductor optical amplifiers; 126 GHz; 240 mA; 79 GHz; 8 Gbit/s; HBT; InP; emitter area; high current InP double hetero bipolar transistor driver circuit; laser diodes; operating frequencies; resistive load; semiconductor optical amplifier gates; single finger transistors; Bipolar transistors; DH-HEMTs; Diode lasers; Doping; Driver circuits; Frequency; Indium gallium arsenide; Indium phosphide; Substrates; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773731

Filename

773731