A Methodology for Resistance Extraction and Current Density Profiling of Lateral Power MOSFETs

This paper puts forward a novel hierarchical approach for solving the problem of resistance extraction and current density profiling of lateral power MOSFETs mainly used in switching voltage regulators. In the absence of standard resistance extraction tools the design of such power arrays become quite difficult and iterative. The proposed algorithm exploits the inherent geometric symmetry present in the layout of power MOSFETs using a finite element method (FEM) based approach integrated with hierarchical bottom up combination techniques. Finally, a backtracking approach is also proposed that would generate the current density profile of the layout. This uses a top-down approach combined with an efficient storage technique.