Title :
InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)
Author :
Liu, W.C. ; Cheng, S.-Y. ; Pan, H.J. ; Chen, J.Y. ; Wang, W.C. ; Thei, K.B. ; Feng, S.C. ; Yu, K.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling transistors; semiconductor superlattices; InGaP-GaAs; InGaP/GaAs superlatticed resonant-tunneling transistor; confinement barrier; high current gain performance; high emitter injection efficiency; room temperature; three-terminal controlled multiple N-shaped NDR phenomena; transistor performances; Carrier confinement; Charge carrier processes; Chemical vapor deposition; Gallium arsenide; MOCVD; Ohmic contacts; Organic chemicals; Resonant tunneling devices; Superlattices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773736
