InGaP/GaAs superlatticed resonant-tunneling transistor (SRTT)

Author

Liu, W.C. ; Cheng, S.-Y. ; Pan, H.J. ; Chen, J.Y. ; Wang, W.C. ; Thei, K.B. ; Feng, S.C. ; Yu, K.H.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

1999

fDate

1999

Firstpage

475

Lastpage

478

Abstract

In this presentation, we have fabricated and demonstrated a new InGaP/GaAs RTT device. The good transistor performances and an interesting three-terminal controlled multiple N-shaped NDR phenomena are observed at room temperature. In our proposed structure, a 5-period InGaP/GaAs superlattice is employed to serve the RT route and the confinement barrier for holes. Thus a high emitter injection efficiency and high current gain performance can be obtained

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; resonant tunnelling transistors; semiconductor superlattices; InGaP-GaAs; InGaP/GaAs superlatticed resonant-tunneling transistor; confinement barrier; high current gain performance; high emitter injection efficiency; room temperature; three-terminal controlled multiple N-shaped NDR phenomena; transistor performances; Carrier confinement; Charge carrier processes; Chemical vapor deposition; Gallium arsenide; MOCVD; Ohmic contacts; Organic chemicals; Resonant tunneling devices; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773736

Filename

773736