Title :
Low-power low-noise highly ESD robust LNA, and VCO design using above-IC inductors
Author :
Linten, D. ; Sun, X. ; Thijs, S. ; Natarajan, M.I. ; Mercha, A. ; Carchon, G. ; Wambacq, P. ; Nakaie, T. ; Decoutere, S.
Author_Institution :
Inter-Univ. Micro-Electron. Center, Leuven
Abstract :
Above-IC inductors enable low-power RF circuit design, and in addition efficiently protect the RF pins against electrostatic discharge (ESD) stress. This is demonstrated using above-IC inductors in the design of a fully integrated 5 GHz ESD-protected LNA and VCO in 90 nm CMOS. The LNA without ESD protection shows 1.4 dB NF, with 18 dB gain, drawing 4 mA from a 1.2 V supply. The ESD protected LNA has a 2.2 dB NF and 17.6 dB gain while sustaining human body model (HBM) ESD stress of above 8 kV. The 5.4 GHz VCO has a current consumption of 150 muA with a 1.2 V supply, and a 10 % tuning range with a worst case phase noise of -111 dBc/Hz at 1 MHz offset
Keywords :
CMOS integrated circuits; electrostatic discharge; inductors; integrated circuit design; low noise amplifiers; microwave amplifiers; microwave integrated circuits; microwave oscillators; voltage-controlled oscillators; 1 MHz; 1.2 V; 1.4 dB; 150 muA; 17.6 dB; 18 dB; 2.2 dB; 4 mA; 5 GHz; 5.4 GHz; 90 nm; CMOS process; ESD protection; LNA design; RF pin protection; VCO design; above-IC inductors; current consumption; electrostatic discharge stress; human body model ESD stress; low power RF circuit design; phase noise; Circuit synthesis; Electrostatic discharge; Gain; Inductors; Noise measurement; Protection; Radio frequency; Robustness; Stress; Voltage-controlled oscillators;
Conference_Titel :
Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-9023-7
DOI :
10.1109/CICC.2005.1568714
