DocumentCode :
2909011
Title :
Correlation between morphology and island formation on InP surfaces
Author :
Carlstrom, C.F. ; Anand, S. ; Niemi, E. ; Landgren, G.
Author_Institution :
Dept. of Electron., R. Inst. of Technol., Stockholm, Sweden
fYear :
1999
fDate :
1999
Firstpage :
519
Lastpage :
521
Abstract :
The influence of the surface morphology on island formation by As/P exchange reaction on the InP surfaces was investigated. It was demonstrated that island formation is extremely sensitive to the physical nature of the surface. Variation in the surface rms. roughness, caused by controlled ion beam etching (shallow) under different conditions, was shown to drastically affect the island size distribution. Further, the determined total island volume increased with the surface roughness, which is consistent with increased surface area available for As/P exchange reaction. Modification of surface morphology is suggested as an alternative route to vary island size distribution
Keywords :
III-V semiconductors; indium compounds; island structure; rough surfaces; sputter etching; surface chemistry; surface topography; As/P exchange reaction; InP; InP surfaces; controlled ion beam etching; island formation; island size distribution; surface morphology; surface roughness; total island volume; Annealing; Indium phosphide; Ion beams; Rough surfaces; Size control; Sputter etching; Substrates; Surface morphology; Surface roughness; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
ISSN :
1092-8669
Print_ISBN :
0-7803-5562-8
Type :
conf
DOI :
10.1109/ICIPRM.1999.773747
Filename :
773747
Link To Document :
بازگشت