Title :
Imaging studies of strained InGaAsP/InP heterostructures by photoluminescence microscopy
Author :
Bernussi, A.A. ; Carvalho, W., Jr. ; Furtado, M.T. ; Gobbi, A.L. ; Cotta, M.A.
Author_Institution :
Lab. de Optoelectron., CPqD/ABTLuS, Sao Paulo, Brazil
Abstract :
Strained In1-xGaxAsyP1-y /InP single quantum wells grown by low-pressure metal-organic vapor phase epitaxy were investigated by photoluminescence microscopy imaging (PLM), photoluminescence spectroscopy, X-ray diffraction and atomic force microscopy techniques. PLM images of strained structures revealed the presence of a large number of non-radiative centers (dark spots). The dark spot density was dependent on tensile strain magnitude, barrier material and cap layer thickness. PLM images of highly tensile and compressive strained quaternary layers grown with the same structure exhibited quite different relaxation mechanisms
Keywords :
III-V semiconductors; X-ray diffraction; atomic force microscopy; gallium arsenide; gallium compounds; indium compounds; internal stresses; nonradiative transitions; photoluminescence; semiconductor quantum wells; InP; X-ray diffraction; atomic force microscopy; barrier material; cap layer thickness; dark spot density; imaging studies; low-pressure metal-organic vapor phase epitaxy; nonradiative centers; photoluminescence microscopy; photoluminescence microscopy imaging; photoluminescence spectroscopy; quaternary layers; relaxation mechanisms; strained In1-xGaxAsyP1-y /InP single quantum wells; strained InGaAsP/InP heterostructures; tensile strain magnitude; Atomic force microscopy; Atomic layer deposition; Epitaxial growth; Indium phosphide; Optical imaging; Photoluminescence; Spectroscopy; Tensile strain; X-ray diffraction; X-ray imaging;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773748
