Realisation of SI-BH lasers buried by selective LP-MOVPE regrowth under conventional conditions using TBP

Author

Sik, H. ; Bouchoule, S. ; Slempkes, S.

fYear

1999

fDate

1999

Firstpage

547

Lastpage

550

Abstract

Selective planar regrowth of high resistivity (as high as 10⁹ Ω.cm) Fe-doped semi-insulating InP epitaxial layers has been studied to fabricate current confining layers for buried heterostructure lasers. The epitaxial layers were grown with conventional growth conditions on patterned, nonplanar heterostructure mesa by low-pressure organometallic vapor phase epitaxy (LP-MOVPE) with tertiarybutylphosphine (TBP), trimethylindium (TMI) and iron dicyclopentadienyl (Fe(C5H5)2) as the reactant gases. This selective growth has been developed around laser stripes designed without overhang of the selective growth mask. And shows very good static characteristics of the SI-BH lasers as compared to standard BRS laser structures

Keywords

III-V semiconductors; MOCVD; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; Fe-doped semi-insulating InP epitaxial layers; InP; SI-BH lasers; TBP; buried heterostructure lasers; current confining layers; high resistivity; iron dicyclopentadienyl; laser stripes; low-pressure organometallic vapor phase epitaxy; nonplanar heterostructure mesa; selective LP-MOVPE regrowth; selective growth mask; selective planar regrowth; static characteristics; tertiarybutylphosphine; trimethylindium; Conductivity; Epitaxial growth; Epitaxial layers; Gas lasers; Indium phosphide; Iron; Optical design; Optical materials; Plasma temperature; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773753

Filename

773753