Title :
Composition dependence of carrier lifetime and spontaneous emission of highly strained GaInNAs/GaAs QW lasers
Author :
Koyama, F. ; Sato, S. ; Miyamoto, T. ; Iga, K.
Author_Institution :
Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The GaInNAs/GaAs system has been attracting much interest for 1.3 μm monolithic vertical cavity surface emitting lasers (VCSELs). So far, room temperature operations of 1.3 μm GaInNAs/GaAs edge emitting lasers grown by either gas source MBE or MOCVD have been demonstrated. However, the degradation of crystal qualities with increasing the nitrogen composition is a remaining problem. The origin for the deterioration is still unclear. It is essential to find the origin and to improve the quality of GaInNAs for realizing high performance long wavelength GaInNAs lasers. In this work, we present the composition dependence of emission characteristics of highly strained GaInNAs quantum well lasers, including the carrier lifetime, the spontaneous emission efficiency and the threshold current density. A prospect of long wavelength GaInNAs VCSELs for high speed LANs is also discussed
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum wells; spontaneous emission; surface emitting lasers; 1.3 mum; 300 K; GaInNAs-GaAs; GaInNAs/GaAs; N content dependence; carrier lifetime; composition dependence; crystal qualities degradation; edge emitting lasers; highly strained QW lasers; long wavelength lasers; monolithic VCSELs; monolithic vertical cavity surface emitting lasers; room temperature operation; spontaneous emission; threshold current density; Charge carrier lifetime; Degradation; Gallium arsenide; Gas lasers; MOCVD; Quantum well lasers; Spontaneous emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773758
