Title :
Dynamic properties of InGaAs quantum dot lasers
Author :
Mao, M.-H. ; Heinrichsdorff, F. ; Bimberg, D.
Author_Institution :
Inst. fur Festkorperphys., Tech. Univ. Berlin, Germany
Abstract :
Frequency chirping and linewidth enhancement factor are investigated for the first time in quantum dot lasers at room temperature. The time-resolved electroluminescence measurement shows a small chirp of 0.007 Å/mA. The linewidth enhancement factor a is determined to be 2.7 at lasing wavelength due to the asymmetry of gain spectrum caused by excited states
Keywords :
III-V semiconductors; chirp modulation; electroluminescence; excited states; gallium arsenide; indium compounds; quantum well lasers; semiconductor quantum dots; spectral line breadth; time resolved spectra; InGaAs; dynamic properties; excited states; frequency chirping; gain spectrum asymmetry; lasing wavelength; linewidth enhancement factor; quantum dot lasers; room temperature; time-resolved electroluminescence measurement; Chirp modulation; Electroluminescence; Frequency; Indium gallium arsenide; Laser modes; Pulse modulation; Quantum dot lasers; Semiconductor lasers; Temperature; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773759
