InGaAs/GaAs strained quantum wires grown by OMCVD on corrugated substrates

Author

Lelarge, F. ; Leifer, K. ; Condo, A. ; Iakovlev, V. ; Martinet, E. ; Constantin, C. ; Rudra, A. ; Kapon, E.

Author_Institution

Dept. of Phys., Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

1999

fDate

1999

Firstpage

577

Lastpage

580

Abstract

Self-ordered, strained InGaAs/GaAs quantum structures are grown on V-grooved GaAs substrates. Indium segregation at the bottom of the groove results in the formation of a vertical InGaAs quantum well structure with In-enriched composition. The lateral definition permits the growth of defect-free strained structures with thickness exceeding that achieved with planar epitaxy. We study the influence of the nominal thickness and In content on the photoluminescence peak wavelength of V-grooved quantum wires. Finally, room temperature emission at 1.12 μm with relatively narrow linewidth (30-35 meV) is demonstrated

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; internal stresses; photoluminescence; self-assembly; semiconductor growth; semiconductor quantum wires; spectral line breadth; surface segregation; 1.12 mum; In content dependence; In segregation; In-enriched composition; InGaAs/GaAs; InP; OMCVD; V-grooved GaAs substrates; V-grooved quantum wires; corrugated substrates; defect-free strained structures; lateral definition; photoluminescence peak wavelength; self-ordered strained quantum structures; thickness dependence; vertical InGaAs quantum well structure; Atomic force microscopy; Capacitive sensors; Gallium arsenide; Indium gallium arsenide; Physics; Postal services; Quantum dots; Substrates; Temperature; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773761

Filename

773761