Title :
InGaAs quasi-quantum-wire FET on V-grooved substrate by selective growth with As2 flux in hydrogen-assisted molecular beam epitaxy
Author :
Sugaya, Takeyoshi ; Tanuma, Yasuhiko ; Nakagawa, Tadashi ; Ogura, Mutsuo ; Yonei, Kenji ; Sugiyama, Yoshinobu
Author_Institution :
CREST, Electrotech. Lab., Tsukuba, Japan
Abstract :
A field effect transistor (FET) using a single InGaAs quasi-quantum wire (QWR) structure as a channel has been fabricated. The quasi-QWR structures have been fabricated with As2 flux and atomic hydrogen irradiation using molecular beam epitaxy on V-grooved InP substrate. The V-shape is preserved during InAlAs barrier layer growth due to a suppressed migration of In atoms under As2 flux. The V-groove is not preserved and hence the QWR cannot be fabricated under As4 flux. The single InGaAs quasi-QWR is used as a channel of the FET. The FET demonstrated the good saturation characteristics and its maximum transconductance is 300 mS/mm at a drain voltage of 0.5 V
Keywords :
III-V semiconductors; atom-surface impact; field effect transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; semiconductor quantum wires; 0.5 V; As2; As2 flux; H-assisted molecular beam epitaxy; InAlAs; InAlAs barrier layer; InGaAs; InP; V-grooved InP substrate; atomic H irradiation; drain voltage; field effect transistor; maximum transconductance; quasi-quantum-wire FET; saturation characteristics; selective growth; single channel; suppressed In atom migration; Atomic beams; Atomic layer deposition; FETs; Hydrogen; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Substrates; Wire;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773762
