Title :
50 GHz monolithically integrated InP/InGaAs PIN/HBT-receiver
Author :
Huber, D. ; Bitter, M. ; Gini, E. ; Neiger, A. ; Morf, T. ; Bergamaschi, C. ; Jackel, H.
Author_Institution :
Electron. Lab., Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We have designed and fabricated a monolithically integrated InP/InGaAs PIN/HBT-photoreceiver for a wavelength of λ=1.55 μm. The transimpedance amplifier achieves a gain of 44.6 dBΩ 170 Ω, and the optical/electrical -3 dB-bandwidth of the entire receiver is 50 GHz, the largest bandwidth reported for any long-wavelength receiver OEIC
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 micron; 50 GHz; InP-InGaAs; InP/InGaAs PIN/HBT-photoreceiver; OEIC; monolithic integration; transimpedance amplifier; Bandwidth; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Optical pulses; Optical receivers; Optoelectronic devices; Preamplifiers; Pulse measurements;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773765
