Title :
1.3 μm emission of TlGaP-LEDs grown on GaAs
Author :
Hubener, Andreas ; Schöbel, Jörg ; Mallwitz, Alexander ; Kowalsky, Wolfgang
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. Braunschweig, Germany
Abstract :
We investigate the growth of the new III-V semiconductor TlGaP on GaAs substrates. TlGaP is a very interesting material for a wide range of emission wavelengths. X-ray diffraction measurements indicate the growth of lattice-matched TlGaP on GaAs. The photoluminescence spectra show room-temperature emission at wavelengths around 1.3 μm, which manifests good crystal quality. The electroluminescence spectrum of the first TlGaP LED is in good agreement with the photoluminescence measurements
Keywords :
III-V semiconductors; X-ray diffraction; electroluminescence; gallium arsenide; gallium compounds; light emitting diodes; molecular beam epitaxial growth; photoluminescence; semiconductor epitaxial layers; semiconductor growth; thallium compounds; 1.3 micrometre; GaAs; III-V semiconductor; TlGaP-GaAs; X-ray diffraction measurements; crystal quality; electroluminescence spectrum; emission wavelengths; photoluminescence spectra; room-temperature emission; Electroluminescence; Gallium arsenide; Lattices; Light emitting diodes; Optical fiber communication; Optical surface waves; Substrates; Temperature; Wavelength division multiplexing; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773766
