DocumentCode :
2909324
Title :
Observation of flexural modes in FBAR resonators at MHz frequencies
Author :
Larson, John D., III ; Ruby, Richard C. ; Telschow, Ken L.
Author_Institution :
Electron. Res. Labs., Agilent Labs., Palo Alto, CA, USA
Volume :
1
fYear :
2003
fDate :
5-8 Oct. 2003
Firstpage :
88
Abstract :
Agilent GHz FBAR resonators are fabricated as suspended membranes of piezoelectric AlN. These vibrate as plate mode resonators in a symmetric or Sm,n type mode, with the resonant frequencies controlled by the thickness of the membrane, ∼1 micron for GHz frequencies. There also exists a class of anti-symmetric or Am,n type flexural plate modes. Resonators operating in this mode exhibit frequencies controlled by both the lateral dimensions and the residual stress in the plate. Unlike the symmetric modes, the Am,n modes are much harder to excite by the symmetric FBAR structure, are not easily observed at the electrical port, and occur in the MHz range for structures with lateral dimensions ∼100 microns. The imaging acoustic interferometer is a technique to visualize GHz rate vibrations in FBAR resonators, at sub-nanometer displacements. This paper describes an extension of that technique, which allows MHz rate Am,n mode vibrations to be visualized. The first few flexural modes were observed, and will be presented as images made while operating at their respective resonant frequencies. Such modes exhibit a rich structure of nodes and phase reversals of the vertical motion. Over 21 modes were observed in the range 0.5 to 15 MHz. The Q is observed to be ∼100. The flexural modes can be analyzed with a combined plate/drumhead theory, and the resonant frequencies fm,n are found to depend on the material properties, static film stress, and the lateral dimensions. This theory yields a regression fit to the data with a goodness of fit coefficient r2>0.95.
Keywords :
III-V semiconductors; acoustic wave interferometry; aluminium compounds; bulk acoustic wave devices; crystal resonators; internal stresses; piezoelectric semiconductors; vibrations; wide band gap semiconductors; 0.5 to 15 MHz; 1 micron; Agilent GHz film bulk acoustic wave resonator; AlN; electrical port; flexural modes; imaging acoustic interferometer; piezoelectric AlN; plate mode resonator vibrations; plate-drumhead theory; residual stress; resonant frequencies; static film stress; suspended membranes; symmetric mode; vertical motion phase reversals; Biomembranes; Drives; Film bulk acoustic resonators; Laboratories; Laser modes; Lasers and electrooptics; Probes; Resonant frequency; Stress; Visualization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
Type :
conf
DOI :
10.1109/ULTSYM.2003.1293362
Filename :
1293362
Link To Document :
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