Title :
A method of incorporating wet-oxidized III-V semiconductor layers into indium phosphide based lasers and amplifiers
Author :
Koley, Bikash ; Johnson, F.G. ; Saini, Simarjeet S. ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD
Abstract :
We have demonstrated a method of efficient wet oxidation for use in device fabrication using material system lattice-matched to indium phosphide. It was found that the oxidation of a strain compensated InAs/AlAs super-lattice grown on InP proceeded much faster than lattice matched InAlAs. This method has been used for current confinement in InP based edge emitting stripe lasers. The same wet oxidation process is also well suited for long wavelength VCSEL application
Keywords :
III-V semiconductors; indium compounds; oxidation; semiconductor lasers; III-V semiconductor; InAs-GaAs; InP; VCSEL; amplifier; current confinement; edge emitting stripe laser; indium phosphide device fabrication; lattice matched layer; strain compensated superlattice; wet oxidation; Aluminum; Capacitive sensors; III-V semiconductor materials; Indium phosphide; Laser theory; Lattices; Oxidation; Semiconductor lasers; Substrates; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773771
