Title :
Higher mobility with high concentration of 2DEG in pseudomorphic In 0.7Ga0.3As/In0.52Al0.48As quantum-well HEMT structure with (411)A super-flat interfaces grown on (411)A InP substrate by MBE
Author :
Hiyamizu, S. ; Kitada, T. ; Aoki, T. ; Higashiwaki, M. ; Shimomura, S.
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
Abstract :
Recently, we have reported that (411)A super-flat hetero-interfaces (effectively atomically flat interfaces over a wafer-size area) can be realized in GaAs/AlGaAs, InGaAs/AlGaAs and InGaAs/InAlAs heterostructures grown on (411)A-oriented substrates by molecular beam epitaxy (MBE). In this paper, we report a high-quality pseudomorphic In0.7Ga0.3As/In0.52Al0.48As quantum-well (QW)-HEMT structure grown on (411)A InP substrates by MBE which shows the highest mobility (39,700 cm2/Vs at 77 K) of two-dimensional electron gas (2DEG) reported so far for InGaAs/InAlAs HEMT structures with similarly high 2DEG concentration (4.5×1012 cm-2)
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; molecular beam epitaxial growth; quantum well devices; two-dimensional electron gas; In0.7Ga0.3As-In0.52Al0.48As; InP; [411]A InP substrate; [411]A super-flat interface; mobility; molecular beam epitaxy; pseudomorphic InGaAs/InAlAs quantum well HEMT; two-dimensional electron gas; Atomic beams; Atomic layer deposition; Electron mobility; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Quantum wells; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773772
