Title :
Homogeneity of Langasite and Langatate wafers for acoustic wave applications
Author :
Fachberger, R. ; Riha, E. ; Born, E. ; Pongratz, P.
Author_Institution :
Vienna Univ. of Technol., Austria
Abstract :
Variations in the concentration of the chemical constituents of Langasite (La3Ga5SiO14) and its homeotype Langatate (La3Ta0.5Ga5.5O14) have been found by the means of X-ray methods and selective crystal etching. To determine their influence on the acoustic properties SAW resonators have been designed and processed on 3" wafers from Langasite and Langatate crystal boules of different suppliers. Compositional changes on a short range scale according to growth striations and on a long range scale as well could be distinguished leading to variations of the SAW velocity up to 1000 ppm within a wafer. If a device covers several growth striations a superposition of different propagation characteristics occurs leading to a multimode behavior and thereby degrading the effective Q-value of the SAW resonators. Wafers from recently grown boules, however, reveal frequency shifts with a standard deviation of 50 ppm only and maximum Q-values of up to 15000, thus demonstrating the progress in crystal growing.
Keywords :
acoustic wave velocity; etching; gallium compounds; lanthanum compounds; surface acoustic wave resonators; tantalum compounds; La3Ga5SiO14; La3Ta0.5Ga5.5O14; Q-value; SAW resonators; SAW velocity; X-ray methods; acoustic properties; chemical constituents; crystal etching; crystal growth; frequency shifts; growth striations; langasite crystal boule; langasite wafer homogeneity; langatate crystal boule; langatate wafer homogeneity; standard deviation; surface acoustic waves resonators; Acoustic waves; Chemical technology; Crystals; Degradation; Etching; Frequency; Material properties; Process design; Surface acoustic waves; Temperature sensors;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293365