A Low-Voltage Low-Power High Linear and Wide-Band Mixer

Author

Renjing, Pan ; Seng, Yeo Kiat ; Yuanjin, Zheng

Author_Institution

Nanyang Technol. Univ., Nanyang

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

341

Lastpage

344

Abstract

This paper describes a low-voltage low-power high linear wideband down conversion mixer based on chartered 0.18 mum RF CMOS technology. By introducing cross coupled NMOS transistors in the transconductance stage as well as an IIP2 intermodulation current path to the folded cascode Gilbert cell structure, this design can achieve a voltage conversion gain of 5.8 dB, power conversion gain of 5.6 dB, IIP3 of -1.3 dBm and IIP2 of +70.7 dBm at a 1 V supply voltage. The design consumes 4 mA current consumption and gives a good noise performance of 9.3 dB. This mixer is designed to operate at a frequency bandwidth of 3-5 GHz.

Keywords

CMOS integrated circuits; intermodulation; low-power electronics; microwave mixers; ultra wideband technology; IIP2 intermodulation current path; RF CMOS technology; cross coupled NMOS transistors; current 4 mA; down conversion mixer; folded cascode Gilbert cell structure; frequency 3 GHz to 5 GHz; gain 5.6 dB; gain 5.8 dB; high linear mixer; low-power mixer; low-voltage mixer; size 0.18 micron; transconductance stage; voltage 1 V; wide-band mixer; Bandwidth; CMOS technology; Gain; MOSFETs; Mixers; Power conversion; Radio frequency; Transconductance; Voltage; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, 2007. ISIC '07. International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0797-2

Electronic_ISBN

978-1-4244-0797-2

Type

conf

DOI

10.1109/ISICIR.2007.4441868

Filename

4441868