A Low-Voltage Low-Power High Linear and Wide-Band Mixer

This paper describes a low-voltage low-power high linear wideband down conversion mixer based on chartered 0.18 mum RF CMOS technology. By introducing cross coupled NMOS transistors in the transconductance stage as well as an IIP2 intermodulation current path to the folded cascode Gilbert cell structure, this design can achieve a voltage conversion gain of 5.8 dB, power conversion gain of 5.6 dB, IIP3 of -1.3 dBm and IIP2 of +70.7 dBm at a 1 V supply voltage. The design consumes 4 mA current consumption and gives a good noise performance of 9.3 dB. This mixer is designed to operate at a frequency bandwidth of 3-5 GHz.