Title :
Design and Simulation of Novel Architectures for Nanodevices
Author :
Csaba, G. ; Erlen, C. ; Pra, M. ; Lugli, P.
Author_Institution :
Tech. Univ. Munchen, Munich
Abstract :
This paper shows how circuit and architecture level simulations can be applied in nanoelectronics. The methodology is illustrated with two examples: passive crossbar memories (made from ZnO or molecular rectifiers) and magnetic field-coupled devices. We will demonstrate how device-level physical tools can help in the modelling of system-level properties such as power gain and scalability.
Keywords :
II-VI semiconductors; SPICE; circuit simulation; integrated circuit modelling; magnetic devices; molecular electronics; nanoelectronics; rectifying circuits; semiconductor device models; semiconductor storage; zinc compounds; ZnO; circuit level simulations; magnetic field-coupled devices; molecular rectifiers; nanodevice architectures; nanoelectronics; passive crossbar memories; power gain; scalability analysis; system-level properties modelling; Circuit simulation; Contacts; Coupling circuits; Magnetic fields; Nanoelectronics; Nanostructures; Scalability; Schottky diodes; Semiconductor diodes; Zinc oxide;
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0797-2
Electronic_ISBN :
978-1-4244-0797-2
DOI :
10.1109/ISICIR.2007.4441872
