Title :
Highly c-axis-oriented AlN film using MOCVD for 5GHz-band FBAR filter
Author :
Yang, C.-M. ; Uehara, K. ; Kim, S.-K. ; Kameda, S. ; Nakase, H. ; Tsubouchi, K.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
Abstract :
We have successfully developed to deposit highly c-axis-oriented aluminum nitride (AlN) film using metal-organic-chemical-vapor deposition (MOCVD). Full-width at half-maximum (FWHM) of the deposited AlN(0002) film whose thickness was 1 μm has found to be 2.98°. The value of FWHM means the deposited film has the electromechanical coupling coefficient (K2) of 6.4%. The conditions of deposition were substrate temperature of 1050°C, pressure of 20Torr, and V-III ratio of 25000. Film-bulk-acoustic resonator (FBAR) band-pass filter for 5 GHz orthogonal-frequency-division multiplexing (OFDM) wireless local area network (WLAN) system has been designed using the c-axis-oriented AlN film. The designed band-pass filter has the sufficient bandwidth of more than 100 MHz, which is evaluated from butterworth-van dyke (BVD) equivalent circuit model of FBAR.
Keywords :
III-V semiconductors; MOCVD; acoustic resonator filters; aluminium compounds; band-pass filters; crystal orientation; frequency division multiplexing; semiconductor thin films; wide band gap semiconductors; wireless LAN; 1 micron; 1050 degC; 5 GHz; AlN; MOCVD; band pass filter; butterworth-van dyke equivalent circuit model; c-axis oriented AlN film; electromechanical coupling coefficient; film bulk acoustic resonator filter; full-width at half-maximum; metal organic chemical vapour deposition; orthogonal FDM; orthogonal frequency division multiplexing; wireless LAN system; wireless local area network system; Aluminum nitride; Band pass filters; Bandwidth; Film bulk acoustic resonators; Levee; MOCVD; OFDM; Substrates; Temperature; Wireless LAN;
Conference_Titel :
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN :
0-7803-7922-5
DOI :
10.1109/ULTSYM.2003.1293381
