DocumentCode
2909796
Title
Material parameters of rf magnetron sputtered SiO2 thin films for temperature stable SiO2/LiNbO3 saw devices
Author
Tomar, Monika ; Gupta, Vinay ; Sreenivas, K.
Author_Institution
Dept. of Phys. & Astrophys., Delhi Univ., India
Volume
1
fYear
2003
fDate
5-8 Oct. 2003
Firstpage
204
Abstract
SAW propagation characteristics, velocity and temperature coefficient of delay (TCD) of a 128° Y-X LiNbO3 SAW device integrated with an over-layer of rf magnetron sputtered SiO2 film have been studied. A deviation in the experimental observations with respect to the theoretical calculations on the layered structure SiO2/LiNbO3 are identified mainly due to the difference in the material parameters of the deposited SiO2 film. Influence of deposition conditions on the materials parameters of SiO2 thin film have been studied, and the representative values of density, dielectric constant, elastic constants (C11 and C44) and their temperature coefficients have been determined, required for the design of a temperature stable SAW device.
Keywords
dielectric materials; dielectric thin films; electrodeposits; lithium compounds; permittivity; silicon; sputtered coatings; surface acoustic wave devices; thermal stability; wave propagation; 128 degC; SAW propagation characteristics; SiO2-LiNbO3; delay temperature coefficient; deposited film; dielectric constant; dielectric material; dielectric thin films; elastic constants; layered structure; material parameters; rf magnetron sputtering; surface acoustic waves; temperature stable saw device; Dielectric materials; Dielectric thin films; Magnetic devices; Magnetic materials; Propagation delay; Radiofrequency identification; Sputtering; Surface acoustic wave devices; Surface acoustic waves; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics, 2003 IEEE Symposium on
Print_ISBN
0-7803-7922-5
Type
conf
DOI
10.1109/ULTSYM.2003.1293389
Filename
1293389
Link To Document