CMOS Dual-Wideband Low-Noise Amplifier in 3.1GHz-4.9GHz and 6.0GHz-10.3GHz for Ultra-Wideband Wireless Receiver

In this paper a CMOS dual-wideband low-noise amplifier (LNA) is designed for ultra-wideband (UWB) wireless receiver radio system. The design consists of a wideband input impedance matching network, two stage cascode amplifiers with shunt-peaked load, a notch filter and an output buffer for measurement purpose. It is simulated in TSMC 0.18 um standard RF CMOS process. The LNA gives 13.66 dB maximum power gain between 3.0 GHz-4.9 GHz and 10.34 dB maximum power gain between 6.0 GHz-10.3 GHz while consuming 24.07 mW through a 1.8 V supply. Over the 3.1 GHz-4.9 GHz frequency band and the 6.0 GHz-10.3 GHz, a minimum noise figure is 2.6 dB and 3.8 dB. Input return loss lower than -8.31 dB in all bandwidth have been achieved.