Title :
A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver
Author :
Mustaffa, M.T. ; Zayegh, A. ; Veljanovski, R. ; Stojcevski, A.
Author_Institution :
Victoria Univ., Melbourne
Abstract :
A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using inductive shunt-peaking that added more freedom to the circuit. Circuit simulation results shows a power gain of 23 dB, a noise figure of 0.6 dB with IIP3 and 1-dB compression point of -5.1 dBm and -17.3 dBm respectively. The current consumption for this circuit is 9.5 mA with voltage supply of 2.5 V.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; mobile radio; radio receivers; wideband amplifiers; CMOS technology process; CMOS wideband LNA; circuit topology; current 9.5 mA; frequency 1.8 GHz to 2.1 GHz; gain 23 dB; inductive shunt-peaking; inductively degenerated common source; multi-standard mobile receiver; noise figure 0.6 dB; single-ended wideband low noise amplifier; size 0.25 μm; voltage 2.5 V; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Circuit noise; Circuit simulation; Circuit topology; Gain; Low-noise amplifiers; Wideband;
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0796-5
Electronic_ISBN :
978-1-4244-0797-2
DOI :
10.1109/ISICIR.2007.4441888
