A 1.8 GHz to 2.1 GHz 0.25 μm CMOS wideband LNA for a multi-standard mobile receiver

Author

Mustaffa, M.T. ; Zayegh, A. ; Veljanovski, R. ; Stojcevski, A.

Author_Institution

Victoria Univ., Melbourne

fYear

2007

fDate

26-28 Sept. 2007

Firstpage

422

Lastpage

425

Abstract

A single-ended wideband low noise amplifier for a multi-standard (1.8 GHz to 2.1 GHz) mobile receiver has been designed and simulated in a 0.25 μm CMOS technology process. The circuit topology is based on inductively degenerated common source (IDCS). The enhancement for bandwidth was performed using inductive shunt-peaking that added more freedom to the circuit. Circuit simulation results shows a power gain of 23 dB, a noise figure of 0.6 dB with IIP3 and 1-dB compression point of -5.1 dBm and -17.3 dBm respectively. The current consumption for this circuit is 9.5 mA with voltage supply of 2.5 V.

Keywords

CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; low noise amplifiers; mobile radio; radio receivers; wideband amplifiers; CMOS technology process; CMOS wideband LNA; circuit topology; current 9.5 mA; frequency 1.8 GHz to 2.1 GHz; gain 23 dB; inductive shunt-peaking; inductively degenerated common source; multi-standard mobile receiver; noise figure 0.6 dB; single-ended wideband low noise amplifier; size 0.25 μm; voltage 2.5 V; Bandwidth; Broadband amplifiers; CMOS process; CMOS technology; Circuit noise; Circuit simulation; Circuit topology; Gain; Low-noise amplifiers; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits, 2007. ISIC '07. International Symposium on

Conference_Location

Singapore

Print_ISBN

978-1-4244-0796-5

Electronic_ISBN

978-1-4244-0797-2

Type

conf

DOI

10.1109/ISICIR.2007.4441888

Filename

4441888