An ultra-low power injection locked transmitter for wireless sensor networks

Author

Chee, Y.H. ; Niknejad, A.M. ; Rabaey, J.

Author_Institution

Dept. of EECS, UC Berkeley, CA

fYear

2005

fDate

21-21 Sept. 2005

Firstpage

797

Lastpage

800

Abstract

This paper presents an ultra-low power, low voltage injection locked transmitter for wireless sensor networks. The transmitter utilizes Film Bulk Acoustic Resonator (FBAR) to obtain a stable 1.9 GHz carrier and achieves 32% efficiency while delivering 0 dBm from a 280 mV supply. With 50% on-off keying, it consumes 1.6 mW and supports a maximum data rate of 50 kbps. The transmitter is implemented in a standard 130 nm CMOS process and packaged using chip-on-board techniques

Keywords

CMOS integrated circuits; acoustic resonators; chip-on-board packaging; micromechanical devices; radio transmitters; semiconductor device packaging; wireless sensor networks; 1.6 mW; 1.9 GHz; 130 nm; 280 mV; 50 kbit/s; CMOS process; FBAR; MEMS; chip-on-board; film bulk acoustic resonator; packaging; ultra-low power injection locked transmitter; wireless sensor network; Energy consumption; Film bulk acoustic resonators; Injection-locked oscillators; Micromechanical devices; Power amplifiers; Power generation; Radio frequency; Radiofrequency microelectromechanical systems; Transmitters; Wireless sensor networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568789

Filename

1568789