Unified non-quasi-static MOSFET model for large-signal and small-signal simulations

Author

Wang, H. ; Li, X. ; Wu, W. ; Gildenblat, G. ; van Langevelde, R. ; Smit, G.D.J. ; Scholten, A.J. ; Klaassen, D.B.M.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA

fYear

2005

fDate

21-21 Sept. 2005

Firstpage

823

Lastpage

826

Abstract

The spline-collocation-based non-quasi-static model is extended to include small-geometry effects and to enable both small-signal and large-signal simulations. The new NQS model has been implemented into circuit simulators using both SP and PSP models and verified using RF test data. Additional verification is provided by comparison with the results of numerical simulations and with the MM11 channel segmentation method. The large-signal and small-signal simulation results are compatible and consistent with the quasi-static formulation at low frequencies

Keywords

MOSFET; circuit simulation; semiconductor device models; MM11 channel segmentation; MOSFET; PSP model; RF test data; SP model; circuit simulator; large-signal simulation; small-geometry effect; small-signal simulation; spline-collocation-based nonquasi-static model; Circuit simulation; Circuit testing; Differential equations; Laboratories; MOSFET circuits; Numerical simulation; Polynomials; Radio frequency; Semiconductor device modeling; Spline;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568796

Filename

1568796