MOSFET harmonic distortion analysis up to the non-quasi-static frequency regime

Author

Takeda, Youichi ; Navarro, Dondee ; Chiba, Shingo ; Miura-Mattausch, Mitiko ; Mattausch, Hans Jurgen ; Ohguro, Tatsuya ; Iizuka, Takahiro ; Taguchi, Masahiko ; Kumashiro, S. ; Miyamoto, Shunsuke

Author_Institution

Res. Center for Nanodevices & Syst., Hiroshima Univ.

fYear

2005

fDate

21-21 Sept. 2005

Firstpage

827

Lastpage

830

Abstract

MOSFET harmonic distortion characteristics up to the cutoff frequency (f_T) are measured and analyzed with the MOSFET model HiSIM. While distortion characteristics at low frequency are determined by carrier mobility, characteristics at high frequency are influenced by the time delay of carriers to form the channel. At low frequency, IP3 values, calculated using a quasi-static model, correspond to values from the conventional method of extraction. For accurate prediction of IP3, non-quasi-static effects become necessary at high-frequency switching above f_T/2

Keywords

MOSFET; carrier mobility; delays; harmonic distortion; semiconductor device models; HiSIM; IP3 value; MOSFET; carrier mobility; harmonic distortion analysis; nonquasi-static frequency; quasi-static model; time delay; Cutoff frequency; Distortion measurement; Frequency measurement; Harmonic analysis; Harmonic distortion; High definition video; MOSFET circuits; Power harmonic filters; Power system harmonics; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 2005. Proceedings of the IEEE 2005

Conference_Location

San Jose, CA

Print_ISBN

0-7803-9023-7

Type

conf

DOI

10.1109/CICC.2005.1568797

Filename

1568797