DocumentCode :
2910597
Title :
CMOS Low-Noise Amplifier for 6-11GHz MB-OFDM UWB Wireless Radio System
Author :
Huang, Zhe-Yang ; Huang, Che-Cheng
Author_Institution :
Nat. Chiao Tung Univ., Hsin-Chu
fYear :
2007
fDate :
26-28 Sept. 2007
Firstpage :
588
Lastpage :
591
Abstract :
This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4 dB, input and output matching lower then -8.5 dB and -14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.
Keywords :
CMOS integrated circuits; MMIC amplifiers; OFDM modulation; low noise amplifiers; low-power electronics; ultra wideband communication; CMOS low-noise amplifier; MB-OFDM UWB wireless radio system; RF CMOS process; frequency 6 GHz to 11 GHz; gain 21.4 dB; low-power low-noise amplifier; noise figure 4 dB; power 11.2 mW; size 0.18 mum; ultra-wideband wireless radio system; voltage 1.8 V; Broadband amplifiers; Costs; Energy consumption; FCC; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Switched capacitor networks; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0797-2
Electronic_ISBN :
978-1-4244-0797-2
Type :
conf
DOI :
10.1109/ISICIR.2007.4441930
Filename :
4441930
Link To Document :
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