DocumentCode
2910597
Title
CMOS Low-Noise Amplifier for 6-11GHz MB-OFDM UWB Wireless Radio System
Author
Huang, Zhe-Yang ; Huang, Che-Cheng
Author_Institution
Nat. Chiao Tung Univ., Hsin-Chu
fYear
2007
fDate
26-28 Sept. 2007
Firstpage
588
Lastpage
591
Abstract
This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM Group-C and Group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18um RF CMOS process. Simulation results show that power gain of 12.4 dB, input and output matching lower then -8.5 dB and -14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption is 11.2 mW through 1.8V power supply.
Keywords
CMOS integrated circuits; MMIC amplifiers; OFDM modulation; low noise amplifiers; low-power electronics; ultra wideband communication; CMOS low-noise amplifier; MB-OFDM UWB wireless radio system; RF CMOS process; frequency 6 GHz to 11 GHz; gain 21.4 dB; low-power low-noise amplifier; noise figure 4 dB; power 11.2 mW; size 0.18 mum; ultra-wideband wireless radio system; voltage 1.8 V; Broadband amplifiers; Costs; Energy consumption; FCC; Impedance matching; Low-noise amplifiers; Noise figure; Radio frequency; Switched capacitor networks; Ultra wideband technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location
Singapore
Print_ISBN
978-1-4244-0797-2
Electronic_ISBN
978-1-4244-0797-2
Type
conf
DOI
10.1109/ISICIR.2007.4441930
Filename
4441930
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