Title :
Design of GaAs HBT Power Amplifier for WCDMA Wireless Communication Systems
Author :
Alam, M.S. ; Armstrong, G.A.
Author_Institution :
A.M.U., Aligarh
Abstract :
The power amplifier (PA) used in wide-band code-division multiple-access (WCDMA) needs to perform better from point of view linearity and efficiency. In the PA circuit harmonic traps and RC feedback arrangement are provided for improvement of linearity and stability. The power amplifier at collector voltage Vc of 3.4 V under WCDMA excitation shows an excellent linearity (first ACPR<-33dBc) and more than 35% of power-added efficiency (PAE) at 28 dBm of rated output power. All the WCDMA wireless PA specifications like PAE and adjacent channel power rejection (ACPR) as specified in the Third-Generation Partnership Project (3GPP) have been met even at extreme temperature conditions.
Keywords :
III-V semiconductors; RC circuits; UHF integrated circuits; UHF power amplifiers; bipolar analogue integrated circuits; code division multiple access; gallium arsenide; heterojunction bipolar transistors; integrated circuit design; radiocommunication; GaAs; HBT power amplifier design; PAE; Third-Generation Partnership Project; WCDMA excitation; WCDMA wireless communication systems; adjacent channel power rejection; arrangement; extreme temperature conditions; harmonic traps; linearity parameters; power-added efficiency; stability parameters; voltage 3.4 V; wide-band code-division multiple-access; Broadband amplifiers; Circuit stability; Feedback circuits; Gallium arsenide; Heterojunction bipolar transistors; Linearity; Multiaccess communication; Power amplifiers; Voltage; Wireless communication;
Conference_Titel :
Integrated Circuits, 2007. ISIC '07. International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-0797-2
Electronic_ISBN :
978-1-4244-0797-2
DOI :
10.1109/ISICIR.2007.4441932
