DocumentCode :
2911591
Title :
A novel approach to thermal tests for flash memories reliability improvement based on DoE method
Author :
Bacis, G. ; Catelani, M. ; Ciani, L. ; Scarano, V. ; Singuaroli, R.
Author_Institution :
ST Microelectron., Agrate Brianza
fYear :
2007
fDate :
1-3 May 2007
Firstpage :
1
Lastpage :
4
Abstract :
The different steps of an assembly process of NAND flash memories could cause thermal or mechanical stresses that induce faults in their programming. We analyzed the probably faults and to solve the problems found we indicated the interesting parameters and implemented a DoE (design of experiments) as an instrument to plan the laboratory tests. The flash memories under test are Pb-free and our trials shown an improvement when a new conductive silver glue is used in the assembly process.
Keywords :
NAND circuits; design of experiments; flash memories; integrated circuit reliability; integrated circuit testing; thermal stresses; DoE method; NAND flash memories; design of experiments; mechanical stress; reliability improvement; thermal stress; thermal tests; Assembly; Electronic equipment testing; Electronic packaging thermal management; Flash memory; Instrumentation and measurement; Laboratories; Microelectronics; Production; Silver; Thermal stresses; BGA package; Pb free solder; design of experiments; flash memory; reliability tests; silver filled; thermal stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Instrumentation and Measurement Technology Conference Proceedings, 2007. IMTC 2007. IEEE
Conference_Location :
Warsaw
ISSN :
1091-5281
Print_ISBN :
1-4244-0588-2
Type :
conf
DOI :
10.1109/IMTC.2007.379240
Filename :
4258257
Link To Document :
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