Title :
Millimeter-wave bandwidth, SiGe-HBT travelling wave amplifier
Author :
Kerzar, B. ; Mokhtari, M. ; Yinggang Li ; Hansson, B. ; Washio, K. ; Harada, T. ; Lewin, T.
Author_Institution :
Qeyton AB, Stockholm, Sweden
Abstract :
One Dimensional, three stage Travelling Wave amplifier structures have been designed and manufactured in Hitachi´s 100-GHz SiGe-HBT technology. Measurements show that the circuits exhibit a bandwidth of about 67 GHz with 6 dB of gain. The circuit is operational at 3.3 V supply voltage consuming 23 mA current. The chip area is approximately 1/spl times/1 mm/sup 2/.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; millimetre wave amplifiers; semiconductor materials; travelling wave amplifiers; 100 GHz; 23 mA; 3.3 V; 6 dB; 67 GHz; SiGe; SiGe HBT technology; gain; millimeter-wave bandwidth; one-dimensional three-stage travelling wave amplifier; Bandwidth; Circuit simulation; Frequency; Gain; Integrated circuit interconnections; Isolation technology; Millimeter wave communication; Millimeter wave technology; Optical amplifiers; Voltage;
Conference_Titel :
GaAs IC Symposium, 2000. 22nd Annual
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-5968-2
DOI :
10.1109/GAAS.2000.906290
